Samsung MZ-V8P2T0BW internal solid state drive M.2 2000 GB PCI Express 4.0 V-NAND MLC NVMe

Samsung MZ-V8P2T0BW internal solid state drive M.2 2000 GB PCI Express 4.0 V-NAND MLC NVMe

Features

TRIM support	Y
Memory type	V-NAND MLC
Hardware encryption	Y
Security algorithms	256-bit AES
Interface	PCI Express 4.0
NVMe version	1.3c
NVMe	Y
SSD form factor	M.2
Random write (4KB)	1000000 IOPS
Component for	PC/notebook
Read speed	7000 MB/s
Write speed	5100 MB/s
SSD capacity	2000 GB
S.M.A.R.T. support	Y
Mean time between failures (MTBF)	1500000 h
Random read (4KB)	1000000 IOPS
PCI Express interface data lanes	x4

Power

Operating voltage	3.3 V
Power consumption (standby)	0.035 W
Power consumption (max)	7.2 W
Power consumption (average)	6.1 W

Operational conditions

Maximum operating temperature	70 °C
Operating shock	1500 G
Operating temperature (T-T)	0 - 70 °C

Height	22.1 mm
Width	80.2 mm
Depth	2.38 mm
Weight	9 g

Packaging data

Box